DETERMINATION OF IMPURITY DOPANT DISTRIBUTIONS IN DIAMOND FILMS BY SIMS

被引：0
|
作者：
BUCKLEYGOLDER, IM
CHALKER, PR
GLASS, JT
KOBASHI, K
NAKAUE, A
机构：
[1] HARWELL LAB,CTR MICROELECTR MAT,DIDCOT OX11 ORA,OXON,ENGLAND
[2] KOBE STEEL LTD,ELECTR RES LAB,NISHI KU,KOBE 67302,JAPAN
[3] N CAROLINA STATE UNIV,DEPT MAT SCI & ENGN,RALEIGH,NC 27695
来源：
CARBON | 1990年 / 28卷 / 06期
关键词：
D O I：
10.1016/0008-6223(90)90311-L
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
引用
收藏
页码：801 / 801
页数：1
相关论文
共 50 条
  • [31] A new method of formation of impurity-doped diamond films by bias method
    Saito, D
    Tsutsumi, E
    Ishigaki, N
    Tashiro, T
    Kimura, T
    Yugo, S
    DIAMOND AND RELATED MATERIALS, 2002, 11 (10) : 1804 - 1807
  • [32] Raman and photoluminescence analysis of stress state and impurity distribution in diamond thin films
    North Carolina State Univ, Raleigh, United States
    J Appl Phys, 11 (6709-6719):
  • [33] a-Si capping SIMS for shallow dopant profiles
    Miwa, S
    APPLIED SURFACE SCIENCE, 2004, 231 : 658 - 662
  • [34] IMPURITY MIGRATION DURING SIMS DEPTH PROFILING
    VRIEZEMA, CJ
    ZALM, PC
    SURFACE AND INTERFACE ANALYSIS, 1991, 17 (12) : 875 - 887
  • [35] EVALUATION OF IMPURITY DISTRIBUTIONS
    LEHOVEC, K
    PIHL, C
    WRIGLEY, C
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1959, 106 (03) : C62 - C62
  • [36] NEW METHODS FOR THE DETERMINATION OF DOPANT SITE DISTRIBUTIONS AND DOPANT RATES OF DIFFUSION IN LOW-DENSITY POLYETHYLENE FILMS WITH COVALENTLY ATTACHED ANTHRYL GROUPS - FLUORESCENCE QUENCHING BY N,N-DIMETHYLANILINE IN UNSTRETCHED, STRETCHED, AND SWELLED FILMS
    HE, ZQ
    HAMMOND, GS
    WEISS, RG
    MACROMOLECULES, 1992, 25 (05) : 1568 - 1575
  • [37] Impurity distributions in barrier anodic films on aluminium: a GDOES depth profiling study
    Shimizu, K
    Brown, GM
    Habazaki, H
    Kobayashi, K
    Skeldon, P
    Thompson, GE
    Wood, GC
    ELECTROCHIMICA ACTA, 1999, 44 (13) : 2297 - 2306
  • [38] Determination of impurity distributions in ingots of solar grade silicon by neutron activation analysis
    Karches, Barbara
    Schoen, Jonas
    Gerstenberg, Heiko
    Hampel, Gabriele
    Krenckel, Patricia
    Plonka, Christian
    Ponsard, Bernard
    Riepe, Stephan
    Stieghorst, Christian
    Wiehl, Norbert
    RADIOCHIMICA ACTA, 2017, 105 (07) : 569 - 576
  • [39] IMAGING OF BORON DOPANT IN HIGHLY ORIENTED DIAMOND FILMS BY CATHODOLUMINESCENCE IN A TRANSMISSION ELECTRON-MICROSCOPE
    GRAHAM, RJ
    SHAAPUR, F
    KATO, Y
    STONER, BR
    APPLIED PHYSICS LETTERS, 1994, 65 (03) : 292 - 294
  • [40] Determination of impurity distribution in IG-11/110 nuclear graphite using TOF-SIMS
    Yan, Dexuan
    Cao, Xinlei
    Shen, Ke
    JOURNAL OF NUCLEAR MATERIALS, 2024, 588
12345