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Impurity distributions in barrier anodic films on aluminium: a GDOES depth profiling study
被引:58
|作者:
Shimizu, K
Brown, GM
Habazaki, H
Kobayashi, K
Skeldon, P
Thompson, GE
Wood, GC
机构:
[1] Univ Manchester, Inst Sci & Technol, Ctr Corros & Protect, Manchester M60 1QD, Lancs, England
[2] Keio Univ, Chem Lab, Yokohama, Kanagawa 223, Japan
[3] Keio Univ, Fac Sci & Technol, Dept Chem, Yokohama, Kanagawa 223, Japan
[4] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
基金:
日本学术振兴会;
关键词:
aluminium;
anodizing;
alumina;
GDOES;
analysis;
D O I:
10.1016/S0013-4686(98)00355-7
中图分类号:
O646 [电化学、电解、磁化学];
学科分类号:
081704 ;
摘要:
The impurity distributions in the barrier anodic films formed on aluminium in a wide variety of electrolytes have been investigated by glow discharge optical emission spectroscopy (GDOES) depth profiling. The depth profiles obtained were compared, wherever available, with those obtained by other techniques. It was found that GDOES profiling is an extremely powerful and reliable technique for depth profiling analysis of thin, non-conducting alumina films. Surface charging is insignificant and the sputtering rate of the film is kept constant throughout the analysis, giving rise to excellent depth resolution which is comparable to, or better than, secondary ion mass spectrometry (SIMS) depth profiling analysis. Further sensitivity is also high, given the amount of impurity species being detected successfully. Thus, GDOES is expected to play a great role in depth profiling analysis of non-conducting anodic alumina films or other films where SIMS depth profiling is only of limited use due to ion beam bombardment-induced sample surface charging which has significant influence on the sputtering rate of the films. (C) 1999 Elsevier Science Ltd. All rights reserved.
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页码:2297 / 2306
页数:10
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