HYDROGEN-INDUCED DEFECT IN SI

被引：0
|
作者：
MUTO, S [1 ]
TAKEDA, S [1 ]
HIRATA, M [1 ]
机构：
[1] OSAKA UNIV,COLL GEN EDUC,TOYONAKA,OSAKA 560,JAPAN
来源：
JOURNAL OF ELECTRON MICROSCOPY | 1991年 / 40卷 / 04期
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D O I：
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中图分类号：
TH742 [显微镜];
学科分类号：
摘要：
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页码：254 / 254
页数：1
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