HYDROGEN-INDUCED DEFECT IN SI

被引：0
|
作者：
MUTO, S [1 ]
TAKEDA, S [1 ]
HIRATA, M [1 ]
机构：
[1] OSAKA UNIV,COLL GEN EDUC,TOYONAKA,OSAKA 560,JAPAN
来源：
JOURNAL OF ELECTRON MICROSCOPY | 1991年 / 40卷 / 04期
关键词：
D O I：
暂无
中图分类号：
TH742 [显微镜];
学科分类号：
摘要：
引用
收藏
页码：254 / 254
页数：1
相关论文
共 50 条
  • [31] Hydrogen-induced amorphization of intermetallics
    Aoki, K
    Masumoto, T
    JOURNAL OF ALLOYS AND COMPOUNDS, 1995, 231 (1-2) : 20 - 28
  • [32] Hydrogen-induced defects in niobium
    Cizek, J.
    Prochazka, T.
    Danis, S.
    Cieslar, M.
    Brauer, G.
    Anwand, W.
    Kirchheim, R.
    Pundt, A.
    JOURNAL OF ALLOYS AND COMPOUNDS, 2007, 446 : 479 - 483
  • [33] Hydrogen-induced instability on the flat Si(001) surface via steric repulsion
    Reboredo, FA
    Zhang, SB
    Zunger, A
    PHYSICAL REVIEW B, 2001, 63 (12)
  • [34] STM observations of hydrogen-induced Pb clustering on Pb/Si(111) systems
    Ohba, Y
    Katayama, I
    Watamori, M
    Oura, K
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1998, 66 (Suppl 1): : S1017 - S1019
  • [35] Hydrogen-induced defects in niobium
    Cizek, J.
    Prochazka, I.
    Danis, S.
    Cieslar, M.
    Brauer, G.
    Anwand, W.
    Kirchheim, R.
    Pundt, A.
    Journal of Alloys and Compounds, 2007, 446-447 : 479 - 483
  • [36] Hydrogen-Induced Delayed Cracking
    Pohl, M.
    PRAKTISCHE METALLOGRAPHIE-PRACTICAL METALLOGRAPHY, 2019, 56 (09): : 556 - 566
  • [37] Hydrogen-induced crystallization of amorphous Si thin films. II. Mechanisms and energetics of hydrogen insertion into Si-Si bonds
    Valipa, Mayur S.
    Sriraman, Saravanapriyan
    Aydil, Eray S.
    Maroudas, Dimitrios
    JOURNAL OF APPLIED PHYSICS, 2006, 100 (05)
  • [38] Hydrogen-induced crystallization of amorphous Si thin films. II. Mechanisms and energetics of hydrogen insertion into Si-Si bonds
    Valipa, Mayur S.
    Sriraman, Saravanapriyan
    Aydil, Eray S.
    Maroudas, Dimitrios
    Journal of Applied Physics, 2006, 100 (05):
  • [39] HYDROGEN-INDUCED BREAKDOWN OF LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY OF SI
    ASOKAKUMAR, P
    SZPALA, S
    NIELSEN, B
    SZELES, C
    LYNN, KG
    LANFORD, WA
    SHEPARD, CA
    GOSSMANN, HJ
    PHYSICAL REVIEW B, 1995, 51 (07): : 4630 - 4632
  • [40] Hydrogen-Induced Changes of Flatband Voltage and Light Emission Intensity in MOS Capacitors Containing Si Nanocrystals: Defect-Related Light Emission
    Lee, Tae-Ha
    Yoon, Jong-Hwan
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2009, 55 (06) : 2528 - 2531
12345