LATERAL MOS-GATED POWER DEVICES - A UNIFIED VIEW

被引：14
|
作者：
DARWISH, MN
SHIBIB, MA
机构：
[1] AT&T Bell Laboratories, Reading, PA 19612-3566
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1991年 / 38卷 / 07期
关键词：
D O I：
10.1109/16.85155
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Lateral MOS-controlled devices are very important to high-voltage and power integrated circuits. Recently, many devices were developed that combine MOS and bipolar action in an integrated structure. This paper presents a unified view of lateral MOS-gated power devices based on the underlying device physics. This unified view facilitates a qualitative understanding of the relative merit of different devices and their performance.
引用
收藏
页码：1600 / 1604
页数：5
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