GaAs rectification - An enabling technology for high frequency operation of power MOS-gated transistors

被引：2

作者：

Anderson, S ^{[1
]}

机构：

[1] MOTOROLA INC,OPTOELECT,SIGNAL PROD DIV,PHOENIX,AZ

来源：

ISPSD '96 - 8TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS, PROCEEDINGS | 1996年

关键词：

D O I：

10.1109/ISPSD.1996.509445

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：33 / 39

页数：7

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