GaAs rectification - An enabling technology for high frequency operation of power MOS-gated transistors

被引：2
|
作者：
Anderson, S [1 ]
机构：
[1] MOTOROLA INC,OPTOELECT,SIGNAL PROD DIV,PHOENIX,AZ
来源：
ISPSD '96 - 8TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS, PROCEEDINGS | 1996年
关键词：
D O I：
10.1109/ISPSD.1996.509445
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：33 / 39
页数：7
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