PERFORMANCE OF INVERTED STRUCTURE MODULATION DOPED SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS

被引：8
|
作者：
THORNE, RE [1 ]
FISCHER, R [1 ]
SU, SL [1 ]
KOPP, W [1 ]
DRUMMOND, TJ [1 ]
MORKOC, H [1 ]
机构：
[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1982年 / 21卷 / 04期
关键词：
D O I：
10.1143/JJAP.21.L223
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：L223 / L224
页数：2
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