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- [1] INGAAS/INP SCHOTTKY-BARRIER DIODE PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1989, 113 (02): : 677 - 684
- [2] EMISSION CHARACTERISTICS OF SCHOTTKY-BARRIER INGAAS-INP-AG SEMICONDUCTOR HETEROSTRUCTURES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1990, 24 (09): : 952 - 956
- [3] FIELD-EFFECT TRANSISTORS WITH AN AU/PD/TI-INP SCHOTTKY-BARRIER SOVIET MICROELECTRONICS, 1988, 17 (06): : 292 - 294
- [4] Simulations of Schottky-barrier nanowire field effect transistors IEEE NMDC 2006: IEEE NANOTECHNOLOGY MATERIALS AND DEVICES CONFERENCE 2006, PROCEEDINGS, 2006, : 552 - 553
- [5] SCHOTTKY BARRIERS AND INGAAS/INP-BASED FIELD TRANSISTORS PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1988, 14 (19): : 1807 - 1810
- [6] SCHOTTKY-BARRIER HEIGHT OF PHOSPHIDIZED INGAAS JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1993, 32 (2B): : L239 - L242
- [7] THE SURFACE AND SCHOTTKY-BARRIER IN GAAS AND INP VIDE-SCIENCE TECHNIQUE ET APPLICATIONS, 1985, 40 (226): : 137 - 147
- [10] DETERMINATION OF NOISE TEMPERATURE OF UHF FIELD TRANSISTORS WITH SCHOTTKY-BARRIER IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII RADIOELEKTRONIKA, 1994, 37 (1-2): : A75 - A78