INFLUENCE OF COMPENSATION OF IMPURITIES ON ELECTRIC BREAKDOWN IN N-TYPE GE

被引：0
|
作者：
BANNAYA, VF
VESELOVA, LI
GERSHENZON, EM
CHUENKOV, VA
机构：
[1] VI LENIN PEDAGOG INST, MOSCOW, USSR
[2] PN LEBEDEV PHYS INST, MOSCOW, USSR
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1974年 / 7卷 / 10期
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D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
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页码：1315 / 1318
页数：4
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