INFLUENCE OF COMPENSATION OF IMPURITIES ON ELECTRIC BREAKDOWN IN N-TYPE GE

被引：0

作者：

BANNAYA, VF

VESELOVA, LI

GERSHENZON, EM

CHUENKOV, VA

机构：

[1] VI LENIN PEDAGOG INST, MOSCOW, USSR

[2] PN LEBEDEV PHYS INST, MOSCOW, USSR

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1974年 / 7卷 / 10期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1315 / 1318

页数：4

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