INFLUENCE OF IMPLANTED XENON ON SPUTTERING YIELD OF SILICON

被引：20

作者：

BLANK, P ^{[1
]}

WITTMAACK, K ^{[1
]}

机构：

[1] GESELLSCH STRAHLEN & UMWELTFORSCH MBH,PHYS TECH ABT,D-8042 NEUHERBERG,FED REP GER

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1975年 / 27卷 / 1-2期

关键词：

D O I：

10.1080/00337577508233004

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：29 / 33

页数：5

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BLANK P, TO BE PUBLISHED

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