LOW-TEMPERATURE FORMATION OF SI(111)7X7 SURFACES FROM CHEMICALLY PREPARED H/SI(111)-(1 X-1) SURFACES

被引：29
|
作者：
VINH, LT
EDDRIEF, M
SEBENNE, CA
DUMAS, P
TALEBIBRAHIMI, A
GUNTHER, R
CHABAL, YJ
DERRIEN, J
机构：
[1] UNIV PARIS 11,LURE,F-91405 ORSAY,FRANCE
[2] AT&T BELL LABS,MURRAY HILL,NJ 07974
来源：
APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 24期
关键词：
D O I：
10.1063/1.111288
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Reflection high energy and low energy electron diffraction, along with high resolution photoemission studies reveal that ideally H-terminated Si(111) surfaces, H/Si(111)-(1 X 1) prepared by wet chemical etching, transform in ultrahigh vacuum into atomically clean Si(111)7 X 7 surfaces upon hydrogen desorption at temperatures as low as 550-degrees-C.
引用
收藏
页码：3308 / 3310
页数：3
相关论文
共 50 条
  • [41] NEW ADATOM MODEL FOR SI(111) 7X7 AND SI(111)-GE 5X5 RECONSTRUCTED SURFACES
    CHADI, DJ
    PHYSICAL REVIEW B, 1984, 30 (08): : 4470 - 4480
  • [42] KINETICS OF THE (7X7)-][- (1X1) TRANSITION ON SI(111)
    TELIEPS, W
    BAUER, E
    BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 1986, 90 (03): : 197 - 200
  • [43] THE SI(111) 7X7 TO 1X1 TRANSITION - A SUMMARY
    WEBB, MB
    BENNETT, PA
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (03): : 847 - 851
  • [44] HETEROEPITAXIAL GROWTH AND SUPERSTRUCTURE OF GE ON SI(111)-7X7 AND (100)-2X1 SURFACES
    SHOJI, K
    HYODO, M
    UEBA, H
    TATSUYAMA, C
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1983, 22 (10): : 1482 - 1488
  • [45] STRUCTURAL ANALOGY BETWEEN GESI(111)-5X5 AND SI(111)-7X7 SURFACES
    MCRAE, EG
    GOSSMANN, HJ
    FELDMAN, LC
    SURFACE SCIENCE, 1984, 146 (01) : L540 - L546
  • [46] STRUCTURE OF SI(111)-7X7
    MCRAE, EG
    SURFACE SCIENCE, 1983, 124 (01) : 106 - 128
  • [47] Graphene on Si(111)7x7
    Ochedowski, O.
    Begall, G.
    Scheuschner, N.
    El Kharrazi, M.
    Maultzsch, J.
    Schleberger, M.
    NANOTECHNOLOGY, 2012, 23 (40)
  • [48] STM IMAGES OF ANISOTROPIC ATOMIC STEPS ON SI(111)-7X7 SURFACES
    TOKUMOTO, H
    MIKI, K
    KAJIMURA, K
    JOURNAL OF CRYSTAL GROWTH, 1990, 99 (1-4) : 1329 - 1332
  • [49] Self-assembled nanodot arrays on Si(111)-(7X7) surfaces
    Yoon, M
    Lin, XF
    Chizhov, I
    Mai, H
    Willis, RF
    PHYSICAL REVIEW B, 2001, 64 (08):
  • [50] Fluorine etching on the Si(111)-7x7 surfaces using fluorinated fullerene
    Fujikawa, Y
    Sadowski, JT
    Kelly, KF
    Nakayama, KS
    Nagao, T
    Sakurai, T
    SURFACE SCIENCE, 2002, 521 (1-2) : 43 - 48
12345