LOW-TEMPERATURE FORMATION OF SI(111)7X7 SURFACES FROM CHEMICALLY PREPARED H/SI(111)-(1 X-1) SURFACES

被引：29

作者：

VINH, LT

EDDRIEF, M

SEBENNE, CA

DUMAS, P

TALEBIBRAHIMI, A

GUNTHER, R

CHABAL, YJ

DERRIEN, J

机构：

[1] UNIV PARIS 11,LURE,F-91405 ORSAY,FRANCE

[2] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 24期

关键词：

D O I：

10.1063/1.111288

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Reflection high energy and low energy electron diffraction, along with high resolution photoemission studies reveal that ideally H-terminated Si(111) surfaces, H/Si(111)-(1 X 1) prepared by wet chemical etching, transform in ultrahigh vacuum into atomically clean Si(111)7 X 7 surfaces upon hydrogen desorption at temperatures as low as 550-degrees-C.

引用

页码：3308 / 3310

页数：3

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