SUITABILITY OF RARE-EARTH-OXIDES FOR USE IN THIN-FILM TRANSISTORS

被引：5

|

作者：

SINGH, P

BAISHYA, B

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1987年 / 104卷 / 02期

关键词：

D O I：

10.1002/pssa.2211040244

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：885 / 889

页数：5

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