SUITABILITY OF RARE-EARTH-OXIDES FOR USE IN THIN-FILM TRANSISTORS

被引：5
|
作者：
SINGH, P
BAISHYA, B
机构：
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1987年 / 104卷 / 02期
关键词：
D O I：
10.1002/pssa.2211040244
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：885 / 889
页数：5
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