NOVEL METALORGANIC ROUTE FOR FABRICATION OF BATIO3 THIN FERROELECTRIC-FILMS

被引：10
|
作者：
NOURBAKHSH, S
VASILYEVA, I
CARTER, JN
机构：
[1] Department of Materials Science and Engineering, Polytechnic University, Brooklyn
[2] Department of Chemical Engineering, Cornell University, Ithaca, NY
来源：
APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 21期
关键词：
D O I：
10.1063/1.113481
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A novel diol based metalorganic route has been developed and employed to deposit BaTiO3 films on Si and Pt coated Si substrates. Differential thermal analysis, thermogravimetric analysis, x-ray photoelectron spectroscopy, and x-ray diffraction collectively indicated that BaTiO3 was formed through the reaction of Ba and Ti oxides at approximately 500°C. The films were single phase, had no crystallographic texture, and contained no detectable impurities.© 1995 American Institute of Physics.
引用
收藏
页码：2804 / 2806
页数：3
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