NOVEL METALORGANIC ROUTE FOR FABRICATION OF BATIO3 THIN FERROELECTRIC-FILMS

被引:10
|
作者
NOURBAKHSH, S
VASILYEVA, I
CARTER, JN
机构
[1] Department of Materials Science and Engineering, Polytechnic University, Brooklyn
[2] Department of Chemical Engineering, Cornell University, Ithaca, NY
关键词
D O I
10.1063/1.113481
中图分类号
O59 [应用物理学];
学科分类号
摘要
A novel diol based metalorganic route has been developed and employed to deposit BaTiO3 films on Si and Pt coated Si substrates. Differential thermal analysis, thermogravimetric analysis, x-ray photoelectron spectroscopy, and x-ray diffraction collectively indicated that BaTiO3 was formed through the reaction of Ba and Ti oxides at approximately 500°C. The films were single phase, had no crystallographic texture, and contained no detectable impurities.© 1995 American Institute of Physics.
引用
收藏
页码:2804 / 2806
页数:3
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