PILE UP OF IMPLANTED PHOSPHORUS DURING PALLADIUM SILICIDE FORMATION AND THE CHARACTERISTICS OF SCHOTTKY-BARRIER DIODES

被引：15
|
作者：
KIKUCHI, A
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 07期
关键词：
D O I：
10.1063/1.332579
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：3998 / 4000
页数：3
相关论文
共 50 条
  • [41] EFFECT OF DIELECTRIC SURFACING ON LOW-TEMPERATURE CURRENT-VOLTAGE CHARACTERISTICS OF DIODES WITH SCHOTTKY-BARRIER
    BOZHKOV, VG
    MALAKHOVSKII, OY
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1983, 26 (11): : 101 - 105
  • [42] Formation of steep, low Schottky-barrier contacts by dopant segregation during nickel silicidation
    Feste, S. F.
    Knoch, J.
    Buca, D.
    Zhao, Q. T.
    Breuer, U.
    Mantl, S.
    JOURNAL OF APPLIED PHYSICS, 2010, 107 (04)
  • [43] A DLTS ANALYSIS OF ELECTRON AND HOLE TRAPS IN PROTON IMPLANTED VPE GROWN N-GAAS USING SCHOTTKY-BARRIER DIODES
    AURET, FD
    NEL, M
    SNYMAN, HC
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1988, 105 (3-4): : 225 - 237
  • [44] CHARACTERISTICS OF ELECTRICAL AND STRAIN EFFECTS IN SCHOTTKY-BARRIER STRUCTURES MADE OF GALLIUM-ARSENIDE IMPLANTED WITH OXYGEN IONS
    MAKSIMOVA, NK
    ROMANOVA, ID
    FILONOV, NG
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (01): : 56 - 58
  • [45] CURRENT VOLTAGE CHARACTERISTICS OF ION-BEAM SYNTHESIZED COSI2/SI SCHOTTKY-BARRIER DIODES
    SPRAGGS, RS
    PANANAKAKIS, G
    BAUZA, D
    REESON, KJ
    SEALY, BJ
    ELECTRONICS LETTERS, 1992, 28 (03) : 296 - 298
  • [46] Impact of interface traps on current-voltage characteristics of 4H-SiC Schottky-barrier diodes
    Moghadam, Hamid Amini
    Dimitrijev, Sima
    Han, Jisheng
    SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, 778-780 : 710 - 713
  • [47] A CHARACTERIZATION TECHNIQUE FOR THE DEGRADATION CHARACTERISTICS OF TI/SI SCHOTTKY-BARRIER DIODES AND OHMIC CONTACTS AFTER THERMAL SILICIDATION
    LOU, YS
    WU, CY
    SOLID-STATE ELECTRONICS, 1994, 37 (02) : 353 - 358
  • [48] METAL-INDUCED SURFACE STATES DURING SCHOTTKY-BARRIER FORMATION ON SI, GE, AND GAAS
    ROWE, JE
    CHRISTMAN, SB
    MARGARITONDO, G
    PHYSICAL REVIEW LETTERS, 1975, 35 (21) : 1471 - 1475
  • [49] ELECTRICAL CHARACTERISTICS OF AN ION-IMPLANTED P-GA0.47IN0.53AS MESFET AT DIFFERENT SCHOTTKY-BARRIER HEIGHTS
    CHATTOPADHYAY, SN
    DUTTA, D
    PAL, BB
    SOLID-STATE ELECTRONICS, 1990, 33 (07) : 963 - 967
  • [50] HIGH-FREQUENCY NOISES AND CURRENT-VOLTAGE CHARACTERISTICS INVESTIGATIONS IN THE SCHOTTKY-BARRIER DIODES AT HIGH DIRECT CURRENTS
    BOZHKOV, VG
    MALAKHOVSKY, OY
    LEUSKY, VE
    STRUKOV, IA
    RADIOTEKHNIKA I ELEKTRONIKA, 1983, 28 (06): : 1182 - 1191
12345