PILE UP OF IMPLANTED PHOSPHORUS DURING PALLADIUM SILICIDE FORMATION AND THE CHARACTERISTICS OF SCHOTTKY-BARRIER DIODES

被引：15

|

作者：

KIKUCHI, A

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 07期

关键词：

D O I：

10.1063/1.332579

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：3998 / 4000

页数：3

相关论文

共 50 条

[21] SCHOTTKY-BARRIER CHARACTERISTICS OF METAL-AMORPHOUS-SILICON DIODES
WRONSKI, CR
CARLSON, DE
DANIEL, RE
APPLIED PHYSICS LETTERS, 1976, 29 (09) : 602 - 605
[22] RELATIONSHIP BETWEEN JUNCTION RADIUS AND REVERSE LEAKAGE OF SILICIDE SCHOTTKY-BARRIER DIODES.
Drobny, Vladimir F.
1600, (ED-31):
[23] DOPING DEPENDENCE OF BARRIER HEIGHT OF PALLADIUM-SILICIDE SCHOTTKY-DIODES
BROOM, RF
SOLID-STATE ELECTRONICS, 1971, 14 (11) : 1087 - +
[24] EDGE LEAKAGE CONTROL IN PLATINUM-SILICIDE SCHOTTKY-BARRIER DIODES USED FOR INFRARED DETECTION
MCNUTT, MJ
IEEE ELECTRON DEVICE LETTERS, 1988, 9 (08) : 394 - 396
[25] OPTICAL-RESPONSE AT 10.6-MU-M IN TUNGSTEN SILICIDE SCHOTTKY-BARRIER DIODES
KUMAR, S
BOYD, JT
JACKSON, HE
JOURNAL OF APPLIED PHYSICS, 1987, 62 (09) : 3848 - 3852
[26] PALLADIUM-SILICIDE SCHOTTKY-BARRIER IR-CCD FOR SWIR APPLICATIONS AT INTERMEDIATE TEMPERATURES
ELABD, H
VILLANI, T
KOSONOCKY, W
ELECTRON DEVICE LETTERS, 1982, 3 (04): : 89 - 90
[27] BLUE-EMITTING S+-IMPLANTED AU-ZNS SCHOTTKY-BARRIER DIODES
LAWTHER, C
FUJITA, S
TAKAGI, T
JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (05) : 939 - 947
[28] EFFECTS OF SPUTTERING DAMAGE ON CHARACTERISTICS OF MOLYBDENUM-SILICON SCHOTTKY-BARRIER DIODES
MULLINS, FH
BRUNNSCHWEILER, A
SOLID-STATE ELECTRONICS, 1976, 19 (01) : 47 - 50
[29] EFFECTS OF SPUTTERING DAMAGE ON CHARACTERISTICS OF MOLYBDENUM-SILICON SCHOTTKY-BARRIER DIODES
STAREEV, GD
MARVAKOV, DY
SOLID-STATE ELECTRONICS, 1977, 20 (03) : 265 - 265
[30] SILICIDE FORMATION AT THE TI/SI(111) INTERFACE - ROOM-TEMPERATURE REACTION AND SCHOTTKY-BARRIER FORMATION
DELGIUDICE, M
JOYCE, JJ
RUCKMAN, MW
WEAVER, JH
PHYSICAL REVIEW B, 1987, 35 (12): : 6213 - 6221

← 1 2 3 4 5 →