SEU CHARACTERIZATION OF A HARDENED CMOS 64K AND 256K-SRAM

被引：31
|
作者：
SEXTON, FW
FU, JS
KOHLER, RA
KOGA, R
机构：
[1] AT&T BELL LABS,ALLENTOWN,PA 18103
[2] AEROSPACE CORP,LOS ANGELES,CA 90009
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1989年 / 36卷 / 06期
关键词：
D O I：
10.1109/23.45441
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：2311 / 2317
页数：7
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