ELECTRICAL AND STRUCTURAL-PROPERTIES OF P-N-JUNCTIONS IN CW LASER ANNEALED SILICON

被引：7
|
作者：
MAIER, M
BIMBERG, D
FERNHOLZ, G
BAUMGART, H
PHILLIPP, F
机构：
[1] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART,FED REP GER
[2] MAX PLANCK INST MET RES,INST PHYS,D-7000 STUTTGART 80,FED REP GER
来源：
JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 08期
关键词：
D O I：
10.1063/1.331432
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：5904 / 5907
页数：4
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