ELECTRICAL AND STRUCTURAL-PROPERTIES OF P-N-JUNCTIONS IN CW LASER ANNEALED SILICON

被引：7
|
作者：
MAIER, M
BIMBERG, D
FERNHOLZ, G
BAUMGART, H
PHILLIPP, F
机构：
[1] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART,FED REP GER
[2] MAX PLANCK INST MET RES,INST PHYS,D-7000 STUTTGART 80,FED REP GER
来源：
JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 08期
关键词：
D O I：
10.1063/1.331432
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：5904 / 5907
页数：4
相关论文
共 50 条
  • [21] TRAPPING LEVEL MEASUREMENTS OF IMPLANTED AND ANNEALED SI P-N-JUNCTIONS
    BARNES, CE
    ANDERSON, RE
    JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (05) : 720 - 720
  • [22] P-N-JUNCTIONS IN POLYCRYSTALLINE-SILICON FILMS
    MANOLIU, J
    KAMINS, TI
    SOLID-STATE ELECTRONICS, 1972, 15 (10) : 1103 - &
  • [23] PHOTOELECTRIC PROPERTIES OF P-N-JUNCTIONS BASED ON POLYCRYSTALLINE SILICON PREPARED ELECTROCHEMICALLY
    BAKIROV, MY
    MADATOV, RS
    MUSTAFAEV, YM
    INORGANIC MATERIALS, 1989, 25 (10) : 1472 - 1473
  • [24] INFLUENCE OF NONSTOICHIOMETRY ON PROPERTIES OF DIFFUSED P-N-JUNCTIONS IN SILICON-CARBIDE
    ANDREEV, AP
    VIOLIN, EE
    LEVIN, VI
    TAIROV, YM
    TSVETKOV, VF
    YAREMENKO, IE
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1990, 24 (05): : 518 - 520
  • [25] ANISOTROPY OF AVALANCHE BREAKDOWN IN SILICON P-N-JUNCTIONS
    KYUREGYAN, AS
    SOROKIN, YG
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (11): : 1232 - 1234
  • [26] CAPACITANCE OF P-N-JUNCTIONS UNDER ELECTRICAL BREAKDOWN
    NATARAJAN, K
    RAMKUMAR, K
    SATYAM, M
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1989, 111 (02): : K269 - K272
  • [27] QUANTUM-SIZE P-N-JUNCTIONS IN SILICON
    BAGRAEV, NT
    KLYACHKIN, LE
    MALYARENKO, AM
    SUKHANOV, VL
    SOLID-STATE ELECTRONICS, 1991, 34 (10) : 1149 - 1156
  • [28] PROBLEM OF THE BREAKDOWN VOLTAGE OF P-N-JUNCTIONS IN SILICON
    MASLENNIKOV, NM
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1991, 25 (06): : 589 - 591
  • [29] FEASIBILITY OF FABRICATION OF P-N-JUNCTIONS IN SILICON BY MILLISECOND LASER-RADIATION PULSES
    VAKHABOV, DA
    ZAKIROV, AS
    IBRAGIMOV, NI
    KARABAEV, MK
    KAKHAROV, SS
    MAMADALIMOV, AT
    KHABIBULLAEV, PK
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (04): : 455 - 456
  • [30] IV CHARACTERISTICS OF P-N-JUNCTIONS TREATED BY LASER
    FOGARASSY, E
    SLAOUI, A
    SIFFERT, P
    REVUE DE PHYSIQUE APPLIQUEE, 1985, 20 (03): : 157 - 162
12345