INFLUENCE OF P AND AS IMPLANTATION OF THE FORMATION OF MOSI2

被引:12
|
作者
VANOMMEN, AH
WOLTERS, RAM
机构
关键词
D O I
10.1063/1.335583
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:4043 / 4048
页数:6
相关论文
共 50 条
  • [41] A dislocation tetrahedron for MoSi2
    Mitchell, TE
    ACTA MATERIALIA, 2000, 48 (10) : 2713 - 2718
  • [42] Impression creep of MoSi2
    Dorcakova, F.
    Spakova, J.
    Dusza, J.
    KOVOVE MATERIALY-METALLIC MATERIALS, 2009, 47 (02): : 83 - 87
  • [43] Electronic properties of MoSi2
    Shugani, Mani
    Aynyas, Mahendra
    Sanyal, S. P.
    Rajagopalan, M.
    INDIAN JOURNAL OF PURE & APPLIED PHYSICS, 2013, 51 (09) : 634 - 637
  • [44] FILM PROPERTIES OF MOSI2 AND THEIR APPLICATION TO SELF-ALIGNED MOSI2 GATE MOSFET
    MOCHIZUKI, T
    TSUJIMARU, T
    KASHIWAGI, M
    NISHI, Y
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1980, 15 (04) : 496 - 500
  • [45] 微波烧结制备MoSi2及SiC/MoSi2纳米复合陶瓷
    刘长虹
    艾云龙
    何文
    宇航材料工艺, 2012, 42 (03) : 54 - 58
  • [46] FILM PROPERTIES OF MOSI2 AND THEIR APPLICATION TO SELF-ALIGNED MOSI2 GATE MOSFET
    MOCHIZUKI, T
    TSUJIMARU, T
    KASHIWAGI, M
    NISHI, Y
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1431 - 1435
  • [47] OXIDATION OF MOSI2/TIB2 AND MOSI2/AL2O3 MIXTURES
    MESCHTER, PJ
    SCRIPTA METALLURGICA ET MATERIALIA, 1991, 25 (05): : 1065 - 1069
  • [48] Electrochemical Formation of MoSi2 Film on Ni-Based Superalloy
    Takeda, Osamu
    Yamanaka, Shigeki
    Hoshi, Masayoshi
    Zhu, Hongmin
    Sato, Yuzuru
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2017, 164 (14) : D978 - D984
  • [50] Effects of boron addition on the formation of MoSi2 by combustion synthesis mode
    Feng, Peizhong
    Wu, Jie
    Islam, S. H.
    Liu, Weisheng
    Niu, Jinan
    Wang, Xiaohong
    Qiang, Yinghuai
    JOURNAL OF ALLOYS AND COMPOUNDS, 2010, 494 (1-2) : 161 - 165