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- [1] THE INFLUENCE OF IMPLANTATION PARAMETERS AND ANNEALING CONDITIONS ON THE FORMATION AND PROPERTIES OF MOSI2 LAYERS EPM 87: ENERGY PULSE AND PARTICLE BEAM MODIFICATION OF MATERIALS, 1988, 8 : 327 - 334
- [3] MOSI2 FORMATION BY RAPID ISOTHERMAL ANNEALING ELECTRON DEVICE LETTERS, 1982, 3 (07): : 179 - 181
- [4] INFLUENCE OF ALUMINUM ON OXIDATION BEHAVIOR OF MOSI2 PLANSEEBERICHTE FUR PULVERMETALLURGIE, 1977, 25 (03): : 195 - 204
- [5] Creep behavior of MoSi2 and MoSi2 + SiC composite Journal of Materials Science, 2004, 39 : 4073 - 4077
- [6] MECHANICAL-BEHAVIOR OF MOSI2 AND MOSI2 COMPOSITES MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 1995, 192 : 31 - 37
- [9] ELECTRONIC-STRUCTURE AND FORMATION OF MOSI2 SILICIDES CHINESE PHYSICS-ENGLISH TR, 1990, 10 (02): : 481 - 487
- [10] REFRACTORY MOSI2 AND MOSI2 POLYSILICON BULK CMOS CIRCUITS ELECTRON DEVICE LETTERS, 1982, 3 (02): : 37 - 40