共 50 条
- [23] ANALYSIS OF SURFACE-DEFECTS ON GAAS GROWN BY MOLECULAR-BEAM EPITAXY FUJITSU SCIENTIFIC & TECHNICAL JOURNAL, 1986, 22 (05): : 427 - 433
- [24] ORIGIN OF SURFACE-DEFECTS ON MOLECULAR-BEAM EPITAXIALLY GROWN GAAS JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (08): : L524 - L526
- [27] COMPENSATION IN MBE-GROWN GAAS DOPED WITH SILICON AND BERYLLIUM INSTITUTE OF PHYSICS CONFERENCE SERIES, 1990, (106): : 471 - 476
- [28] Spin lifetime measurements in MBE-grown GaAs epilayers PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2002, 233 (03): : 445 - 452
- [30] MBE-GROWN INSULATING OXIDE-FILMS ON GAAS JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 290 - 294