MBE-GROWN INSULATING OXIDE-FILMS ON GAAS

被引：12
|
作者：
PLOOG, K [1 ]
FISCHER, A [1 ]
TROMMER, R [1 ]
HIROSE, M [1 ]
机构：
[1] HIROSHIMA UNIV,DEPT ELECT ENGN,HIROSHIMA 730,JAPAN
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1979年 / 16卷 / 02期
关键词：
GALLIUM ARSENIDE;
D O I：
10.1116/1.569929
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：290 / 294
页数：5
相关论文
共 50 条
  • [1] SILICON DOPING OF MBE-GROWN GAAS FILMS
    NEAVE, JH
    DOBSON, PJ
    HARRIS, JJ
    DAWSON, P
    JOYCE, BA
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 32 (04): : 195 - 200
  • [2] Composition of MBE-grown iron oxide films
    Voogt, FC
    Hibma, T
    Smulders, P
    Niesen, L
    JOURNAL OF CRYSTAL GROWTH, 1997, 174 (1-4) : 440 - 445
  • [3] PROPERTIES OF PLASMA GROWN GAAS OXIDE-FILMS
    CHANG, RPH
    KAUFFMAN, RL
    FELDMAN, LC
    POATE, JM
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1977, 22 (03): : 453 - 453
  • [4] Constrained phase coexistence in thin MBE-grown MnAs films on GaAs
    Jenichen, B
    Kaganer, VM
    Schippan, F
    Braun, W
    Däweritz, L
    Ploog, KH
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 91 : 433 - 436
  • [5] MBE-Grown GaAs Films on GaAs(111)A Substrates Misoriented toward [21¯1¯]
    G. B. Galiev
    Russian Microelectronics, 2003, 32 (1) : 14 - 20
  • [6] SIDEGATING IN A GAAS MBE-GROWN HFET STRUCTURE
    VUONG, THH
    GIBSON, WC
    AHRENS, RE
    PARSEY, JM
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (01) : 51 - 57
  • [7] Polycrystalline MBE-grown GaAs for solar cells
    Friedman, DJ
    Kurtz, SR
    Kibbler, AE
    AlJassim, M
    Jones, K
    Keyes, B
    Matson, R
    NREL/SNL PHOTOVOLTAICS PROGRAM REVIEW - PROCEEDINGS OF THE 14TH CONFERENCE: A JOINT MEETING, 1997, (394): : 703 - 708
  • [8] Atomic structure of MBE-grown GaAs nanowhiskers
    I. P. Soshnikov
    G. É. Cirlin
    A. A. Tonkikh
    Yu. B. Samsonenko
    V. G. Dubovskii
    V. M. Ustinov
    O. M. Gorbenko
    D. Litvinov
    D. Gerthsen
    Physics of the Solid State, 2005, 47 : 2213 - 2218
  • [9] Atomic structure of MBE-Grown GaAs nanowhiskers
    Soshnikov, IP
    Cirlin, GÉ
    Tonkikh, AA
    Samsonenko, YB
    Dubovskii, VG
    Ustinov, VM
    Gorbenko, OM
    Litvinov, D
    Gerthsen, D
    PHYSICS OF THE SOLID STATE, 2005, 47 (12) : 2213 - 2218
  • [10] SURFACE-DEFECTS ON MBE-GROWN GAAS
    SUZUKI, Y
    SEKI, M
    HORIKOSHI, Y
    OKAMOTO, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1984, 23 (02): : 164 - 167
12345