LATTICE TEMPERATURE OF GAAS AND SI DURING PULSED LASER ANNEALING

被引：0
|
作者：
POSPIESZCZYK, A [1 ]
HARITH, MA [1 ]
STRITZKER, B [1 ]
机构：
[1] KERNFORSCHUNGSANLAGE JULICH,INST FESTKORPERFORSCH,D-5170 JULICH,FED REP GER
来源：
JOURNAL DE PHYSIQUE | 1983年 / 44卷 / NC-5期
关键词：
D O I：
10.1051/jphyscol:1983521
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：129 / 129
页数：1
相关论文
共 50 条
  • [31] Process Simulation of Pulsed Laser Annealing on Epitaxial Ge on Si
    Lu, Chun-Ti
    Lu, Fang-Liang
    Tsai, Chung-En
    Huang, Wen-Hung
    Liu, C. W.
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2017, 6 (08) : P495 - P498
  • [32] PULSED LASER ANNEALING OF Ge/Si HETEROSTRUCTURES WITH QUANTUM DOTS
    Gatskevich, E. I.
    Ivlev, G. D.
    Volodin, V. A.
    Dvurechenskii, A. V.
    Efremov, M. D.
    Nikiforov, A. I.
    Yakimov, A. I.
    PHYSICS, CHEMISTRY AND APPLICATION OF NANOSTRUCTURES: REVIEWS AND SHORT NOTES, 2007, : 435 - +
  • [33] A THERMAL-MELTING-MODEL CALCULATION OF PULSED LASER ANNEALING OF GAAS
    WANG, ZL
    SARIS, FW
    PHYSICS LETTERS A, 1981, 83 (07) : 367 - 370
  • [34] LOW-POWER PULSED-LASER ANNEALING OF IMPLANTED GAAS
    VITALI, G
    ROSSI, M
    KARPUZOV, D
    BUDINOV, H
    KALITZOVA, M
    JOURNAL OF APPLIED PHYSICS, 1991, 69 (07) : 3882 - 3885
  • [35] The formation of GaAs/Si photodiodes by pulsed-laser deposition
    Ullrich, B
    Erlacher, A
    Jaeger, H
    PHOTON PROCESSING IN MICROELECTRONICS AND PHOTONICS III, 2004, 5339 : 365 - 373
  • [36] Platinum silicide formation during pulsed laser annealing prepared by pulsed laser deposition
    Li, MC
    Chen, XK
    Wang, J
    Yang, JP
    Wu, G
    Zhao, LC
    FOURTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS, 2000, 4086 : 823 - 826
  • [37] LATTICE LOCATION OF IMPLANTED AS AND SB IN SILICON AFTER PULSED LASER ANNEALING
    WHITE, CW
    PRONKO, PP
    APPLETON, BR
    WILSON, SR
    NARAYAN, J
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 47 (1-4): : 31 - 35
  • [38] A Comparative Study on Si Activation in GaAs Between Laser Annealing and Rapid Thermal Annealing
    Ong, C. Y.
    Pey, K. L.
    Ng, C. M.
    Ong, B. S.
    Wong, C. P.
    Shen, Z. X.
    Xing, Z. X.
    Wang, X. C.
    Zheng, H. Y.
    Chan, L.
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2010, 13 (06) : II200 - II202
  • [39] PHASE SELECTION DURING PULSED LASER ANNEALING OF MANGANESE
    FOLLSTAEDT, DM
    PEERCY, PS
    PEREPEZKO, JH
    APPLIED PHYSICS LETTERS, 1986, 48 (05) : 338 - 340
  • [40] MELTING PHENOMENON DURING PULSED LASER ANNEALING IN SILICON
    PETROFF, PM
    AUSTON, DH
    PATEL, JR
    SMITH, P
    SAVAGE, A
    GOLOVCHENKO, JA
    JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (05) : 729 - 729
12345