LATTICE TEMPERATURE OF GAAS AND SI DURING PULSED LASER ANNEALING

被引：0
|
作者：
POSPIESZCZYK, A [1 ]
HARITH, MA [1 ]
STRITZKER, B [1 ]
机构：
[1] KERNFORSCHUNGSANLAGE JULICH,INST FESTKORPERFORSCH,D-5170 JULICH,FED REP GER
来源：
JOURNAL DE PHYSIQUE | 1983年 / 44卷 / NC-5期
关键词：
D O I：
10.1051/jphyscol:1983521
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：129 / 129
页数：1
相关论文
共 50 条
  • [21] TIME-RESOLVED AND SPACE-RESOLVED SI LATTICE-TEMPERATURE MEASUREMENTS DURING CW LASER ANNEALING OF SI ON SAPPHIRE
    MURAKAMI, K
    TOHMIYA, Y
    TAKITA, K
    MASUDA, K
    APPLIED PHYSICS LETTERS, 1984, 45 (06) : 659 - 661
  • [22] STRESS-RELEASED LAYER FORMED BY PULSED RUBY-LASER ANNEALING ON GAAS-ON-SI
    KIM, Y
    KIM, MS
    KIM, EK
    KIM, HS
    MIN, SK
    LEE, HW
    KIM, JK
    LEE, C
    JOURNAL OF APPLIED PHYSICS, 1990, 67 (07) : 3358 - 3361
  • [23] Pulsed laser annealing of Si-Ge superlattices
    Sobolev, NA
    Ivlev, GD
    Gatskevich, EI
    Leitao, JP
    Fonseca, A
    Carmo, MC
    Lopes, AB
    Sharaev, DN
    Kibbel, H
    Presting, H
    MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, 2003, 23 (1-2): : 19 - 22
  • [24] Pulsed-laser annealing of GaAs in a multilayer semiconductor structure
    Markevich, MI
    Podol'tsev, AS
    Piskunov, FA
    Chao, C
    INORGANIC MATERIALS, 1999, 35 (03) : 224 - 226
  • [25] Effects of annealing temperature on amorphous GaN films formed on Si(111) by pulsed laser deposition
    Xi, H. Z.
    Man, B. Y.
    Chen, C. S.
    Liu, M.
    Wei, J.
    Yang, S. Y.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2009, 24 (08)
  • [26] RAMAN MEASUREMENT OF LATTICE TEMPERATURE DURING PULSED LASER-HEATING OF SILICON
    LO, HW
    COMPAAN, A
    PHYSICAL REVIEW LETTERS, 1980, 44 (24) : 1604 - 1607
  • [27] PHONON POPULATIONS DURING PULSED LASER ANNEALING
    COMPAAN, A
    JOURNAL OF LUMINESCENCE, 1985, 30 (1-4) : 425 - 445
  • [28] LATTICE EXCITATIONS DURING LASER ANNEALING OF SEMICONDUCTORS
    PARANJAPE, VV
    PANAT, PV
    JOURNAL OF APPLIED PHYSICS, 1985, 57 (02) : 615 - 617
  • [29] PULSE LASER ANNEALING EFFECTS IN SI-IMPLANTED GAAS
    ORABY, AH
    YUBA, Y
    TAKAI, M
    GAMO, K
    NAMBA, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1984, 23 (03): : 326 - 330
  • [30] TIME-DEPENDENCE OF THE REFLECTIVITY OF SI AT 633 AND 488 NM DURING PULSED LASER ANNEALING
    NATHAN, MI
    HODGSON, RT
    YOFFA, EJ
    APPLIED PHYSICS LETTERS, 1980, 36 (07) : 512 - 513
12345