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- [4] TIME-RESOLVED OPTICAL MEASUREMENT OF SI LATTICE TEMPERATURE DURING NANOSECOND PULSED LASER ANNEALING PHYSICA B & C, 1983, 117 (MAR): : 1024 - 1026
- [6] ELECTRONIC DILATION OF SI DURING PULSED LASER ANNEALING JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (02): : L125 - L127
- [7] LASER ANNEALING OF SI AND GAAS BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1980, 25 (03): : 462 - 462
- [8] LATTICE TEMPERATURE RISE OF SILICON DURING LASER ANNEALING APPLIED PHYSICS B-PHOTOPHYSICS AND LASER CHEMISTRY, 1982, 29 (03): : 182 - 182