CHEMICAL BEAM EPITAXY OF GA0.47IN0.53AS/INP QUANTUM-WELLS AND HETEROSTRUCTURE DEVICES

Chemical beam epitaxy (CBE) is the newest development in epitaxial growth technology. It combines advantages of molecular beam epitaxy (MBE) and organometallic chemical vapor deposition (OMCVD). This paper reviews some of the recent progress in the preparation of Ga//0//. //4//7In//0//. //5//3As/InP heterostructures and devices by CBE. Extreme composition uniformity has been obtained for Ga//0//. //4//7In//0//. //5//3As epilayers which exhibited excitonic transitions with linewidths (full-width at half-maxima) as narrow as 1. 2 mev at 2 K. Such linewidth represents the narrowest ever obtained for GaInAs grown by any technique. Similarly, Ga//0//. //4//7In//0//. //5//3As/InP single quantum wells with thickness as thin as 6 A have 2 K photoluminescence linewidths substantially narrower than reported values. These linewidths indicate the 'effective' interface roughness to be 0. 12 lattice constant. Double-heterostructure p-i-n photodetectors exhibited high quantum efficiency of 70% (without anti-reflection coating) and less than 1 nA dark current at minus 10 V. Ga//0//. //4//7In//0//. //5//3As/InP double-heterostructure and multiquantum well lasers emitting at 1. 47-1. 72 mu m have threshold current densities of 1. 3 and 1. 5 ka/cm**2.