HOT-ELECTRON NOISE GENERATION IN GALLIUM-ARSENIDE SCHOTTKY-BARRIER DIODES

被引：7
|
作者：
KEEN, NJ [1 ]
ZIRATH, H [1 ]
机构：
[1] CHALMERS UNIV TECHNOL,S-41296 GOTHENBURG,SWEDEN
来源：
ELECTRONICS LETTERS | 1983年 / 19卷 / 20期
关键词：
D O I：
10.1049/el:19830580
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：853 / 854
页数：2
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