HOT-ELECTRON NOISE GENERATION IN GALLIUM-ARSENIDE SCHOTTKY-BARRIER DIODES

被引：7

作者：

KEEN, NJ ^{[1
]}

ZIRATH, H ^{[1
]}

机构：

[1] CHALMERS UNIV TECHNOL,S-41296 GOTHENBURG,SWEDEN

来源：

ELECTRONICS LETTERS | 1983年 / 19卷 / 20期

关键词：

D O I：

10.1049/el:19830580

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：853 / 854

页数：2

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