HOT-ELECTRON NOISE GENERATION IN GALLIUM-ARSENIDE SCHOTTKY-BARRIER DIODES

被引：7

作者：

KEEN, NJ ^{[1
]}

ZIRATH, H ^{[1
]}

机构：

[1] CHALMERS UNIV TECHNOL,S-41296 GOTHENBURG,SWEDEN

来源：

ELECTRONICS LETTERS | 1983年 / 19卷 / 20期

关键词：

D O I：

10.1049/el:19830580

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：853 / 854

页数：2

共 50 条

[1] GALLIUM-ARSENIDE DUAL SCHOTTKY-BARRIER DIODES
MINDEN, HT
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[2] A MICROSCOPIC INTERPRETATION OF HOT-ELECTRON NOISE IN SCHOTTKY-BARRIER DIODES
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[3] MECHANISM OF THE STRAIN SENSITIVITY OF GALLIUM-ARSENIDE SCHOTTKY-BARRIER DIODES
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[4] HIGH-BURNOUT GALLIUM-ARSENIDE SCHOTTKY-BARRIER DIODES
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[5] HOT-ELECTRON NOISE LIMITATIONS IN SUBMILLIMETER-WAVE SCHOTTKY-BARRIER MIXER DIODES
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[6] TEMPERATURE DEPENDENCE OF SCHOTTKY-BARRIER HEIGHT IN GALLIUM-ARSENIDE
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[7] SCHOTTKY-BARRIER DIODES OF MBE-DEPOSITED ANTIMONY ON N AND P GALLIUM-ARSENIDE
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[8] FABRICATION OF GOLD-N-TYPE GALLIUM-ARSENIDE SCHOTTKY-BARRIER VARACTOR DIODES
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[9] RESONANCE TUNNELING OF ELECTRONS ACROSS A SCHOTTKY-BARRIER ON GALLIUM-ARSENIDE
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POSTNIKOV, KO
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[10] SCHOTTKY-BARRIER LOWERING ON GALLIUM-ARSENIDE BY SUBMICRON OHMIC CONTACTS
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