SUBBAND STRUCTURES OF HIGH MOBILITY ELECTRONS IN SELECTIVELY-DOPED ALGAAS/GAAS/ALGAAS DOUBLE-HETEROJUNCTION FET SYSTEMS

被引：3
|
作者：
INOUE, K [1 ]
SAKAKI, H [1 ]
YOSHINO, J [1 ]
HIRAKAWA, K [1 ]
机构：
[1] UNIV TOKYO,INST IND SCI,MINATO KU,TOKYO 106,JAPAN
来源：
SURFACE SCIENCE | 1986年 / 174卷 / 1-3期
关键词：
D O I：
10.1016/0039-6028(86)90438-3
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
引用
收藏
页码：382 / 386
页数：5
相关论文
共 50 条
  • [31] NOVEL HIGH-PERFORMANCE N-ALGAAS/INGAAS/N-ALGAAS PSEUDOMORPHIC DOUBLE-HETEROJUNCTION MODULATION-DOPED FETS
    NISHII, K
    MATSUNO, T
    ISHIKAWA, O
    YAGITA, H
    INOUE, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (11): : L2216 - L2218
  • [32] AlGaAs/InGaAs/AlGaAs double pulse doped pseudomorphic high electron mobility transistor structures on InGaAs substrates
    Hoke, WE
    Lyman, PS
    Mosca, JJ
    McTaggart, RA
    Lemonias, PJ
    Beaudoin, RM
    Torabi, A
    Bonner, WA
    Lent, B
    Chou, LJ
    Hsieh, KC
    JOURNAL OF APPLIED PHYSICS, 1997, 82 (07) : 3576 - 3580
  • [33] Novel high-performance N-AlGaAs/InGaAs/N-AlGaAs pseudomorphic double-heterojunction modulation-doped FETs
    Nishii, Katsunori
    Matsuno, Toshinobu
    Ishikawa, Osamu
    Yagita, Hideki
    Inoue, Kaoru
    1600, (27):
  • [34] Application of schottky bulk-layer design on double-heterojunction pseudomorphic AlGaAs/InGaAs/AlGaAs high electron mobility transistors (DH-HEMTs)
    Hsu, Meng-Kai
    Tsai, Jung-Hui
    Chiu, Shao-Yen
    Wu, Chung-Hsien
    Liang, Kum-Chieh
    Liu, Kang-Ping
    Huang, Tze-Shuan
    Lour, Wen-Shiung
    MULTI-FUNCTIONAL MATERIALS AND STRUCTURES, PTS 1 AND 2, 2008, 47-50 : 419 - 422
  • [35] ALGAAS/GAAS DOUBLE-HETEROJUNCTION HIGH ELECTRON-MOBILITY TRANSISTORS GROWN BY LOW-PRESSURE ORGANOMETALLIC VAPOR-PHASE EPITAXY
    HUANG, RT
    TU, YY
    KASEMSET, D
    NOURI, N
    COLVARD, C
    ACKLEY, D
    JOURNAL OF APPLIED PHYSICS, 1990, 67 (01) : 550 - 552
  • [36] ROOM-TEMPERATURE MOBILITY OF TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED GAAS-N-ALGAAS HETEROJUNCTION STRUCTURES
    HIYAMIZU, S
    NANBU, K
    MIMURA, T
    FUJII, T
    HASHIMOTO, H
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (05) : L378 - L380
  • [37] 1/F NOISE IN DOUBLE-HETEROJUNCTION ALGAAS/GAAS LASER-DIODES ON GAAS AND ON SI-SUBSTRATES
    FANG, RZ
    VANRHEENEN, AD
    VANDERZIEL, A
    YOUNG, AC
    VANDERZIEL, JP
    JOURNAL OF APPLIED PHYSICS, 1990, 68 (08) : 4087 - 4090
  • [38] PARALLEL ELECTRON-TRANSPORT AND FIELD EFFECTS OF ELECTRON DISTRIBUTIONS IN SELECTIVELY-DOPED GAAS/N-ALGAAS
    INOUE, M
    INAYAMA, M
    HIYAMIZU, S
    INUISHI, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (04): : L213 - L215
  • [39] Ferromagnetism mediated by the upper Hubbard band in selectively doped GaAs/AlGaAs structures
    N. V. Agrinskaya
    V. I. Kozub
    JETP Letters, 2015, 102 : 222 - 225
  • [40] Ferromagnetism mediated by the upper Hubbard band in selectively doped GaAs/AlGaAs structures
    Agrinskaya, N. V.
    Kozub, V. I.
    JETP LETTERS, 2015, 102 (04) : 222 - 225
12345