SUBBAND STRUCTURES OF HIGH MOBILITY ELECTRONS IN SELECTIVELY-DOPED ALGAAS/GAAS/ALGAAS DOUBLE-HETEROJUNCTION FET SYSTEMS

被引：3
|
作者：
INOUE, K [1 ]
SAKAKI, H [1 ]
YOSHINO, J [1 ]
HIRAKAWA, K [1 ]
机构：
[1] UNIV TOKYO,INST IND SCI,MINATO KU,TOKYO 106,JAPAN
来源：
SURFACE SCIENCE | 1986年 / 174卷 / 1-3期
关键词：
D O I：
10.1016/0039-6028(86)90438-3
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
引用
收藏
页码：382 / 386
页数：5
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