SUBBAND STRUCTURES OF HIGH MOBILITY ELECTRONS IN SELECTIVELY-DOPED ALGAAS/GAAS/ALGAAS DOUBLE-HETEROJUNCTION FET SYSTEMS

被引：3

作者：

INOUE, K ^{[1
]}

SAKAKI, H ^{[1
]}

YOSHINO, J ^{[1
]}

HIRAKAWA, K ^{[1
]}

机构：

[1] UNIV TOKYO,INST IND SCI,MINATO KU,TOKYO 106,JAPAN

来源：

SURFACE SCIENCE | 1986年 / 174卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(86)90438-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：382 / 386

页数：5

共 50 条

[1] MBE GROWTH AND PROPERTIES OF ALGAAS GAAS ALGAAS SELECTIVELY-DOPED DOUBLE-HETEROJUNCTION STRUCTURES WITH VERY HIGH CONDUCTIVITY
INOUE, K
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YOSHINO, J
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (10): : L767 - L769
[2] FIELD-DEPENDENT TRANSPORT OF ELECTRONS IN SELECTIVELY DOPED ALGAAS/GAAS/ALGAAS DOUBLE-HETEROJUNCTION SYSTEMS
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[3] GROWTH AND PROPERTIES OF N-ALGAAS/INGAAS SELECTIVELY-DOPED SINGLE-HETEROJUNCTION AND DOUBLE-HETEROJUNCTION FET STRUCTURES
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[4] EFFECTS OF SUBSTRATE TEMPERATURES ON THE DOPING PROFILES OF SI IN SELECTIVELY DOPED ALGAAS/GAAS/ALGAAS DOUBLE-HETEROJUNCTION STRUCTURES
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[5] MODELING FOR ELECTRON-TRANSPORT IN ALGAAS/GAAS/ALGAAS DOUBLE-HETEROJUNCTION STRUCTURES
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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (11) : 2380 - 2385
[6] SELF-CONSISTENT CALCULATION OF ELECTRONIC STATES IN ALGAAS/GAAS/ALGAAS SELECTIVELY DOPED DOUBLE-HETEROJUNCTION SYSTEMS UNDER ELECTRIC-FIELDS
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JOURNAL OF APPLIED PHYSICS, 1985, 58 (11) : 4277 - 4281
[7] ANALYSIS OF MULTI-SUBBAND TRANSPORT IN SELECTIVELY-DOPED N-ALGAAS/GAAS AND N-ALGAAS/INGAS QUANTUM-WELL STRUCTURES
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[8] DYNAMIC PROPERTIES OF AN ALGAAS/GAAS DOUBLE-HETEROJUNCTION THYRISTOR
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[9] SELECTIVELY DOPED DOUBLE-HETEROJUNCTION LATERAL CURRENT INJECTION RIDGE WAVE-GUIDE ALGAAS/GAAS LASER
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[10] AN (ALGA) AS/GAAS/(ALGA) AS SELECTIVELY DOPED DOUBLE-HETEROJUNCTION FET WITH EXTREMELY HIGH CHANNEL CONDUCTIVITY
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