SUPPLEMENTAL MULTILEVEL INTERCONNECTS BY LASER DIRECT WRITING - APPLICATION TO GAAS DIGITAL INTEGRATED-CIRCUITS

被引：33

作者：

BLACK, JG

DORAN, SP

ROTHSCHILD, M

EHRLICH, DJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 15期

关键词：

D O I：

10.1063/1.97993

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1016 / 1018

页数：3

共 50 条

[41] COMPOUND SEMICONDUCTOR DIGITAL INTEGRATED-CIRCUITS
SLEGER, K
MACK, I
SCOTT, C
BUOT, F
MICROWAVE JOURNAL, 1986, 29 (08) : 85 - +
[42] DIGITAL INTEGRATED-CIRCUITS WITH LOW DISSIPATION
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[43] CONTACT AND METALLIZATION PROBLEMS IN GAAS INTEGRATED-CIRCUITS
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[44] SATURATED RESISTOR LOAD FOR GAAS INTEGRATED-CIRCUITS
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[45] GAAS SAMPLED-ANALOG INTEGRATED-CIRCUITS
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[47] PRODUCIBILITY OF GAAS MONOLITHIC MICROWAVE INTEGRATED-CIRCUITS
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[48] ION-IMPLANTATION OF GAAS INTEGRATED-CIRCUITS
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[49] GAAS MATERIALS FOR MONOLITHIC MICROWAVE INTEGRATED-CIRCUITS
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[50] HIGH-SPEED GAAS INTEGRATED-CIRCUITS
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