HGCDTE HETEROJUNCTION CONTACT PHOTOCONDUCTOR

被引:30
|
作者
SMITH, DL [1 ]
ARCH, DK [1 ]
WOOD, RA [1 ]
SCOTT, MW [1 ]
机构
[1] HONEYWELL CORP TECHNOL CTR,BLOOMINGTON,MN 55417
关键词
D O I
10.1063/1.94978
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:83 / 85
页数:3
相关论文
共 50 条
  • [21] ELECTROADHESIVE PROPERTIES OF POLYMER PARTICLES IN CONTACT WITH PHOTOCONDUCTOR SURFACE
    DERJAGUIN, BV
    TOPOROV, YP
    ALEINIKOVA, IN
    JOURNAL OF COLLOID AND INTERFACE SCIENCE, 1976, 54 (01) : 59 - 68
  • [22] MEASUREMENT OF CONTACT RESISTANCE OF AN OHMIC CONTACT APPLIED TO A HIGH-RESISTIVITY PHOTOCONDUCTOR
    MATHUR, VK
    CHANG, CS
    LEE, CH
    REVIEW OF SCIENTIFIC INSTRUMENTS, 1981, 52 (04): : 616 - 618
  • [23] A CCD IMAGER USING ZNSE-ZN1-XCDXTE HETEROJUNCTION PHOTOCONDUCTOR
    TERUI, Y
    YOSHINO, M
    OGURA, M
    NAKAYAMA, M
    YONEDA, M
    CHIKAMURA, T
    MIYATA, Y
    HORIUCHI, S
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1982, 21 (01) : 237 - 242
  • [24] Quantum dot Ge/TiO2 heterojunction photoconductor fabrication and performance
    Church, Carena P.
    Muthuswamy, Elayaraja
    Zhai, Guangmei
    Kauzlarich, Susan M.
    Carter, Sue A.
    APPLIED PHYSICS LETTERS, 2013, 103 (22)
  • [25] Photoinduced ferroelectric hysteresis curve in organic photoconductor/inorganic ferroelectric heterojunction photomemory
    Park, YG
    Lee, HY
    Tanaka, H
    Tabata, H
    Kawai, T
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2003, 42 : S1382 - S1385
  • [26] TEMPERATURE-DEPENDENCE OF AMBIPOLAR MOBILITY FOR A 0.1EV N-TYPE HGCDTE PHOTOCONDUCTOR
    ODA, N
    INFRARED PHYSICS, 1988, 28 (02): : 91 - 95
  • [27] PROGRAMMABLE FREQUENCY EXCISION AND ADAPTIVE FILTERING WITH A GAAS/AIGAAS/GAAS HETEROJUNCTION PHOTOCONDUCTOR ARRAY
    ANDERSON, GW
    KUB, FJ
    GRANT, RL
    PAPANICOLAOU, NA
    MODOLO, JA
    BROWN, DE
    OPTICAL ENGINEERING, 1990, 29 (10) : 1243 - 1248
  • [28] Bilayer graphene/HgCdTe heterojunction based novel GBn infrared detectors
    Bansal, Shonak
    Das, Avishek
    Prakash, Krishna
    Sharma, Kuldeep
    Khanal, Gaurav M.
    Sardana, Neha
    Kumar, Sanjeev
    Gupta, Neena
    Singh, Arun K.
    MICRO AND NANOSTRUCTURES, 2022, 169
  • [29] HgCdTe focal plane arrays formed by heterojunction epitaxy and boron implantation
    Chu, M
    Mesropian, S
    Gurgenian, HK
    Terterian, S
    Wang, CC
    INFRARED DETECTORS AND FOCAL PLANE ARRAYS VII, 2002, 4721 : 234 - 241
  • [30] Modeling of heterojunction HgCdTe photodiodes using approximate k • p approach
    V. Ariel
    G. Bahir
    Journal of Electronic Materials, 1997, 26 : 673 - 677