HGCDTE HETEROJUNCTION CONTACT PHOTOCONDUCTOR

被引：30
|
作者：
SMITH, DL [1 ]
ARCH, DK [1 ]
WOOD, RA [1 ]
SCOTT, MW [1 ]
机构：
[1] HONEYWELL CORP TECHNOL CTR,BLOOMINGTON,MN 55417
来源：
APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 01期
关键词：
D O I：
10.1063/1.94978
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：83 / 85
页数：3
相关论文
共 50 条
  • [11] PHOTOCONDUCTOR-METAL CONTACT AT HIGHER DENSITIES
    DUSSEL, GA
    BOER, KW
    STIRN, RJ
    PHYSICAL REVIEW B, 1973, 7 (04): : 1443 - 1454
  • [12] Growth and photoconductor properties of HgCdTe epilayers grown by hot wall epitaxy method
    Hong, KJ
    Jeong, JW
    Baek, HW
    Jeong, TS
    Youn, CJ
    Moon, JD
    Park, JS
    JOURNAL OF CRYSTAL GROWTH, 2002, 240 (1-2) : 135 - 141
  • [13] Design of HgCdTe Heterojunction Photodiode on Si Substrate
    Zhang, P.
    Ye, Z. H.
    Chen, Y. Y.
    Lin, C.
    Hu, X. N.
    Ding, R. J.
    He, L.
    IMAGE SENSING TECHNOLOGIES: MATERIALS, DEVICES, SYSTEMS, AND APPLICATIONS, 2014, 9100
  • [14] Inherent and additional limitations of HgCdTe heterojunction photodiodes
    Rutkowski, J
    Wenus, J
    OPTO-ELECTRONICS REVIEW, 2001, 9 (03) : 331 - 335
  • [15] HgCdTe double layer heterojunction detector device
    Hess, GT
    Sanders, TJ
    INFRARED DETECTORS AND FOCAL PLANE ARRAYS VI, 2000, 4028 : 353 - 364
  • [16] INFRARED PHOTOCONDUCTOR FABRICATED WITH A MOLECULAR-BEAM EPITAXIALLY GROWN CDTE/HGCDTE HETEROSTRUCTURE
    YUAN, SX
    HE, L
    YU, JB
    YU, MF
    QIAO, YM
    ZHU, JM
    APPLIED PHYSICS LETTERS, 1991, 58 (09) : 914 - 916
  • [17] ELECTROADHESIVE PROPERTIES OF POLYMER PARTICLES IN CONTACT WITH THE PHOTOCONDUCTOR SURFACE
    DERJAGUIN, BV
    TOPOROV, YP
    ALEINIKOVA, IN
    PROGRESS IN SURFACE SCIENCE, 1994, 45 (1-4) : 144 - 153
  • [18] The study of two kinds of surface passivation ways for n-HgCdTe photoconductor device
    Zhou, YD
    Fang, JX
    Tang, DY
    JOURNAL OF INFRARED AND MILLIMETER WAVES, 2000, 19 (03) : 233 - 236
  • [19] HGCDTE HETEROJUNCTION MOSAICS FOR HYBRID FOCAL PLANE APPLICATIONS
    LANIR, M
    PRICE, SL
    RILEY, KJ
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (10) : 1249 - 1250
  • [20] MBE-grown HgCdTe heterojunction structures for IRFPAs
    Wu, OK
    Rajavel, RD
    DeLyon, TJ
    Jensen, JE
    Cockrum, CA
    Johnson, SM
    Venzor, GM
    Chapman, GR
    Wilson, JA
    Patten, EA
    Radford, WA
    PHOTODETECTORS: MATERIALS AND DEVICES, 1996, 2685 : 16 - 27
12345