MULTIPLICATION NOISE IN MULTI-HETEROSTRUCTURE AVALANCHE PHOTO-DIODES

被引：10
|
作者：
RAKSHIT, S [1 ]
CHAKRABORTI, NB [1 ]
SARIN, R [1 ]
机构：
[1] INDIAN INST TECHNOL,CTR RADAR & COMMUN,KHARAGPUR 721302,W BENGAL,INDIA
来源：
SOLID-STATE ELECTRONICS | 1983年 / 26卷 / 10期
关键词：
D O I：
10.1016/0038-1101(83)90076-X
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：999 / 1003
页数：5
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