MICROPLASMA NOISE IN AVALANCHE PHOTO-DIODES FOR VARIABLE LOW-FREQUENCY DISPLACEMENT

被引：0
|
作者：
KAMENETSKAYA, MS
MANSUROV, AN
MARENICH, AS
SHADRIN, GA
机构：
来源：
RADIOTEKHNIKA I ELEKTRONIKA | 1978年 / 23卷 / 03期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：664 / 667
页数：4
相关论文
共 50 条
  • [1] ABSOLUTE NOISE CHARACTERIZATION OF AVALANCHE PHOTO-DIODES
    BRAIN, MC
    ELECTRONICS LETTERS, 1978, 14 (15) : 485 - 487
  • [2] MULTIPLICATION NOISE OF INP AVALANCHE PHOTO-DIODES
    SHIRAI, T
    OSAKA, F
    YAMASAKI, S
    KANEDA, T
    SUSA, N
    APPLIED PHYSICS LETTERS, 1981, 39 (02) : 168 - 169
  • [3] Simulation of displacement damage for silicon avalanche photo-diodes
    Kilic, Adnan
    Pilicer, Ercan
    Tapan, Ilhan
    Ozmutlu, Emin N.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2011, 658 (01): : 70 - 72
  • [4] VERY LOW-NOISE SILICON PLANAR AVALANCHE PHOTO-DIODES
    GOEDBLOED, JJ
    SMEETS, ETJM
    ELECTRONICS LETTERS, 1978, 14 (03) : 67 - 69
  • [5] FAST AVALANCHE PHOTO-DIODES OFFER LOW-NOISE FIGURES
    不详
    ELECTRO-OPTICS, 1983, 15 (08): : 10 - 10
  • [6] MULTIPLICATION NOISE IN (111)INP AVALANCHE PHOTO-DIODES
    OSAKA, F
    KANEDA, T
    FUJITSU, KN
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (10) : 1670 - 1671
  • [7] TEMPORAL AND FREQUENCY-RESPONSE OF AVALANCHE PHOTO-DIODES FROM NOISE MEASUREMENTS
    ANDERSSON, T
    JOHNSTON, AR
    EKLUND, H
    APPLIED OPTICS, 1980, 19 (20): : 3496 - 3499
  • [8] INGAASP AVALANCHE PHOTO-DIODES
    YEATS, R
    CHIAO, SH
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (11) : 1844 - 1845
  • [9] MULTIPLICATION NOISE IN MULTI-HETEROSTRUCTURE AVALANCHE PHOTO-DIODES
    RAKSHIT, S
    CHAKRABORTI, NB
    SARIN, R
    SOLID-STATE ELECTRONICS, 1983, 26 (10) : 999 - 1003
  • [10] Low-Frequency Excess Noise Ratio Approximation for Avalanche Noise Diodes
    Alimenti, Federico
    Simoncini, Guendalina
    Brozzetti, Gianluca
    Dal Maistro, Daniele
    Mariotti, Chiara
    Tiebout, Marc
    IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2019, 29 (09) : 601 - 603
12345