COUPLED MONTE CARLO-DRIFT DIFFUSION ANALYSIS OF HOT-ELECTRON EFFECTS IN MOSFETS

被引：53

作者：

HIGMAN, JM ^{[1
]}

HESS, K ^{[1
]}

HWANG, CG ^{[1
]}

DUTTON, RW ^{[1
]}

机构：

[1] STANFORD UNIV,FAC ELECT ENGN,INTEGRATED CIRCUIT LAB,STANFORD,CA 94305

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 05期

关键词：

D O I：

10.1109/16.299675

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：930 / 937

页数：8

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