COUPLED MONTE CARLO-DRIFT DIFFUSION ANALYSIS OF HOT-ELECTRON EFFECTS IN MOSFETS

被引：53
|
作者：
HIGMAN, JM [1 ]
HESS, K [1 ]
HWANG, CG [1 ]
DUTTON, RW [1 ]
机构：
[1] STANFORD UNIV,FAC ELECT ENGN,INTEGRATED CIRCUIT LAB,STANFORD,CA 94305
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 05期
关键词：
D O I：
10.1109/16.299675
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：930 / 937
页数：8
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