SULFUR INCORPORATION DURING EPITAXIAL-GROWTH OF INP IN THE IN-HCL-PH3-H2 SYSTEM

被引:5
|
作者
GRUNDMANN, D [1 ]
JURGENSEN, H [1 ]
HEYEN, M [1 ]
KOREC, J [1 ]
BALK, P [1 ]
机构
[1] AACHEN TECH UNIV,SONDERFORCH BEREICH 202,D-5100 AACHEN,FED REP GER
关键词
D O I
10.1007/BF02654309
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
9
引用
收藏
页码:749 / 767
页数:19
相关论文
共 50 条
  • [31] Incorporation of hydrogen (1H and2H) into 4H-SiC during epitaxial growth
    Linnarsson, M.K.
    Forsberg, U.
    Janson, M.S.
    Janzán, E.
    Svensson, B.G.
    Materials Science Forum, 2002, 389-393 (01) : 565 - 568
  • [32] Incorporation of hydrogen (1H and 2H) into 4H-SiC during epitaxial growth
    Linnarsson, MK
    Forsberg, U
    Janson, MS
    Janzén, E
    Svensson, BG
    SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 565 - 568
  • [33] FEATURES OF THE TEMPERATURE-DEPENDENCE OF EPITAXIAL-GROWTH RATE OF GAAS IN THE GA(CH3)3-ASH3-H2 SYSTEM
    FROLOV, IA
    LUKICHEV, AV
    TOMCHINSKI, AM
    AVERYANOV, VE
    BARYSHEV, AV
    INORGANIC MATERIALS, 1986, 22 (11) : 1558 - 1560
  • [34] INFLUENCE OF GAS-PHASE COMPOSITION ON KINETICS OF EPITAXIAL-GROWTH IN THE GA(CH3)3-ASH3-H2 SYSTEM
    KRASNOV, AA
    USKOV, VA
    INORGANIC MATERIALS, 1986, 22 (04) : 478 - 481
  • [35] DECOMPOSITION OF ASH3 AND PH3 IN THE EPITAXIAL-GROWTH OF III-V COMPOUNDS
    JORDAN, AS
    ROBERTSON, A
    GALLIUM ARSENIDE AND RELATED COMPOUNDS 1993, 1994, 136 (136): : 595 - 600
  • [36] EPITAXIAL-GROWTH OF GAAS WITH (C2H5)2GACL AND ASH3 IN A HOT-WALL SYSTEM
    BUCHAN, NI
    KUECH, TF
    TISCHLER, MA
    POTEMSKI, R
    JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) : 331 - 336
  • [37] EPITAXIAL-GROWTH OF ZNS BY ZN-S-H2 CVD METHOD
    MATSUMOTO, T
    ISHIDA, T
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (01) : 227 - 228
  • [38] INFLUENCE OF THE RATIO BETWEEN THE GROWTH REAGENTS IN THE GASEOUS-PHASE ON THE FORMATION OF NUCLEI DURING THE EPITAXIAL-GROWTH OF GAAS ON SI IN THE GA(CH3)3-ASH3-H2 SYSTEM
    KRASNOV, AA
    KUDRYAVTSEVA, RV
    IVANOV, VA
    OVSETSINA, AE
    CHKALOVA, YV
    INORGANIC MATERIALS, 1992, 28 (03) : 375 - 378
  • [39] CRITICAL THICKNESS DURING 2-DIMENSIONAL AND 3-DIMENSIONAL EPITAXIAL-GROWTH IN SEMICONDUCTOR HETEROSTRUCTURES
    JAGANNADHAM, K
    NARAYAN, J
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1991, 8 (02): : 107 - 124
  • [40] SELF-MODULATING SB INCORPORATION IN SI/SIGE SUPERLATTICES DURING MOLECULAR-BEAM EPITAXIAL-GROWTH
    FUJITA, K
    FUKATSU, S
    USAMI, N
    SHIRAKI, Y
    YAGUCHI, H
    ITO, R
    NAKAGAWA, K
    SURFACE SCIENCE, 1993, 295 (03) : 335 - 339