共 50 条
- [21] THERMOCHEMICAL CALCULATIONS OF SYSTEM ASH3-PH3-HCL-GA-H2 FOR GAASP VAPOR GROWTH PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 17 (01): : 109 - 114
- [24] THE GA-AS-H-CL VAPOR-PHASE EPITAXIAL-GROWTH SYSTEM METALLURGICAL TRANSACTIONS B-PROCESS METALLURGY, 1985, 16 (01): : 97 - 105
- [25] TEMPERATURE-DEPENDENCE OF DOPING ELEMENT INCORPORATION WITH THE CHEMICAL VAPOR-DEPOSITION EPITAXIAL SILICON .6. SIH4-HCL-PH3-H2 SYSTEM KRISTALL UND TECHNIK-CRYSTAL RESEARCH AND TECHNOLOGY, 1980, 15 (09): : 1051 - 1058
- [30] Incorporation of hydrogen (1h and2h) into 4H-SiC during epitaxial growth (Trans Tech Publications Ltd): : 389 - 393