MINORITY-CARRIER LIFETIME IN GOLD-DIFFUSED SILICON AT HIGH CARRIER CONCENTRATIONS

被引：12
|
作者：
SCHMID, W
REINER, J
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 09期
关键词：
D O I：
10.1063/1.331542
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：6250 / 6252
页数：3
相关论文
共 50 条
  • [41] CATHODOLUMINESCENCE MEASUREMENTS OF MINORITY-CARRIER LIFETIME IN SEMICONDUCTORS
    BOULOU, M
    BOIS, D
    JOURNAL OF APPLIED PHYSICS, 1977, 48 (11) : 4713 - 4721
  • [42] MINORITY-CARRIER LIFETIME IN MERCURY CADMIUM TELLURIDE
    LOPES, VC
    SYLLAIOS, AJ
    CHEN, MC
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (06) : 824 - 841
  • [43] TEMPERATURE-DEPENDENCE OF MINORITY-CARRIER LIFETIME IN IRON-DIFFUSED P-TYPE SILICON-WAFERS
    HAYAMIZU, Y
    HAMAGUCHI, T
    USHIO, S
    ABE, T
    SHIMURA, F
    JOURNAL OF APPLIED PHYSICS, 1991, 69 (05) : 3077 - 3081
  • [44] MINORITY-CARRIER LIFETIME IN LASER RECRYSTALLIZED POLYSILICON
    SAKATA, I
    HAYASHI, Y
    ISHII, K
    TAKAHASHI, T
    YAMANAKA, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (04): : L328 - L330
  • [45] METHOD OF MINORITY-CARRIER LIFETIME DETERMINATION FOR A SEMICONDUCTOR
    KAUROV, VV
    PANTELEEV, VA
    INDUSTRIAL LABORATORY, 1976, 42 (08): : 1280 - 1282
  • [46] MEASUREMENT OF MINORITY-CARRIER LIFETIME IN SILICON AT MICROWAVE FREQUENCIES USING MICROSTRIP TECHNIQUES
    MAKIOS, V
    THOMAS, RE
    ELECTRONICS LETTERS, 1971, 7 (17) : 496 - &
  • [47] SYSTEM FOR MEASURING THE MINORITY-CARRIER LIFETIME IN THE BASE OF SILICON SOLAR-CELLS
    ACEVEDO, AM
    CRUZ, GC
    REVISTA MEXICANA DE FISICA, 1994, 40 (04) : 637 - 645
  • [48] TRANSIENT RECOVERY OF MINORITY-CARRIER LIFETIME IN SILICON AFTER ULTRAVIOLET-IRRADIATION
    ZHONG, L
    BUCZKOWSKI, A
    KATAYAMA, K
    SHIMURA, F
    APPLIED PHYSICS LETTERS, 1992, 61 (08) : 931 - 933
  • [49] MINORITY-CARRIER LIFETIME IN SIO2 SPUTTER-COATED SILICON
    HARA, K
    USAMI, A
    SUZUKI, K
    SURFACE SCIENCE, 1979, 86 (JUL) : 866 - 873
  • [50] MINORITY-CARRIER LIFETIME IN FURNACE AND E-BEAM ANNEALED CZ SILICON
    SUSI, E
    LULLI, G
    PASSARI, L
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (03) : C112 - C112
12345