ENHANCEMENT MODE INP METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS GROWN BY CHEMICAL BEAM EPITAXY

被引：2
|
作者：
ANTREASYAN, A [1 ]
TSANG, WT [1 ]
GARBINSKI, PA [1 ]
机构：
[1] AT&T BELL LABS,HOLMDEL,NJ 07733
来源：
APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 14期
关键词：
D O I：
10.1063/1.97521
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：874 / 876
页数：3
相关论文
共 50 条
  • [41] FABRICATION OF NOVEL SELF-ALIGNED METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS (MISFETS) ON INP BY A S-INTERFACE ENGINEERING TECHNIQUE
    SUNDARARAMAN, CS
    CURRIE, JF
    CANADIAN JOURNAL OF PHYSICS, 1992, 70 (10-11) : 1035 - 1038
  • [42] HETEROEPITAXIAL MOLECULAR-BEAM EPITAXIAL INSB AND ROOM-TEMPERATURE OPERATION OF ITS METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
    OHASHI, T
    BOUR, DP
    ITOH, T
    BERRY, JD
    JOST, SR
    WICKS, GW
    EASTMAN, LF
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (02): : 622 - 624
  • [43] HIGH-SPEED INP INGAASP METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS GROWN BY CHLORIDE VAPOR-PHASE EPITAXY
    ANTREASYAN, A
    GARBINSKI, PA
    MATTERA, VD
    FEUER, MD
    FILIPE, J
    CHU, SNG
    APPLIED PHYSICS LETTERS, 1989, 54 (02) : 176 - 178
  • [44] Microwave operation of diamond metal-insulator-semiconductor field-effect transistors fabricated on single-crystal chemical vapor deposition substrate
    Hirama, Kazuyuki
    Takayanagi, Hidenori
    Yamauchi, Shintaro
    Umezawa, Hitoshi
    Kawarada, Hiroshi
    NEW DIAMOND AND FRONTIER CARBON TECHNOLOGY, 2007, 17 (04): : 201 - 209
  • [45] High Electron Mobility Metal-Insulator-Semiconductor Field-Effect Transistors Fabricated on (111)-Oriented InGaAs Channels
    Ishii, Hiroyuki
    Miyata, Noriyuki
    Urabe, Yuji
    Itatani, Taro
    Yasuda, Tetsuji
    Yamada, Hisashi
    Fukuhara, Noboru
    Hata, Masahiko
    Deura, Momoko
    Sugiyama, Masakazu
    Takenaka, Mitsuru
    Takagi, Shinichi
    APPLIED PHYSICS EXPRESS, 2009, 2 (12)
  • [46] Low-frequency noise in AlTiO/AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors
    Son Phuong Le
    Ui, Toshimasa
    Tuan Quy Nguyen
    Shih, Hong-An
    Suzuki, Toshi-kazu
    JOURNAL OF APPLIED PHYSICS, 2016, 119 (20)
  • [47] Enhancement-mode hydrogenated diamond metal-oxide-semiconductor field-effect transistors with Y2O3 oxide insulator grown by electron beam evaporator
    Liu, J. W.
    Oosato, H.
    Liao, M. Y.
    Koide, Y.
    APPLIED PHYSICS LETTERS, 2017, 110 (20)
  • [48] EFFECT OF PYROLYTIC AL2O3 DEPOSITION TEMPERATURE ON INVERSION-MODE INP METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR
    KOBAYASHI, T
    OKAMURA, M
    YAMAGUCHI, E
    SHINODA, Y
    HIROTA, Y
    JOURNAL OF APPLIED PHYSICS, 1981, 52 (10) : 6434 - 6436
  • [49] PLASMA-DEPOSITED SIO2 FOR PLANAR SELF-ALIGNED GATE METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS ON SEMIINSULATING INP
    TABORY, CN
    YOUNG, PG
    SMITH, ED
    ALTEROVITZ, SA
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (01): : 130 - 133
  • [50] Performance of AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistors with AlN gate insulator prepared by reactive magnetron sputtering
    Stoklas, R.
    Gregusova, D.
    Gazi, S.
    Novak, J.
    Kordos, P.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2011, 29 (01):
12345