ENHANCEMENT MODE INP METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS GROWN BY CHEMICAL BEAM EPITAXY

被引：2
|
作者：
ANTREASYAN, A [1 ]
TSANG, WT [1 ]
GARBINSKI, PA [1 ]
机构：
[1] AT&T BELL LABS,HOLMDEL,NJ 07733
来源：
APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 14期
关键词：
D O I：
10.1063/1.97521
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：874 / 876
页数：3
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