ENHANCEMENT MODE INP METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS GROWN BY CHEMICAL BEAM EPITAXY

被引：2

作者：

ANTREASYAN, A ^{[1
]}

TSANG, WT ^{[1
]}

GARBINSKI, PA ^{[1
]}

机构：

[1] AT&T BELL LABS,HOLMDEL,NJ 07733

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 14期

关键词：

D O I：

10.1063/1.97521

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：874 / 876

页数：3

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